| PART |
Description |
Maker |
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SIM-012ST |
High power chip sensor/ side view type
High power chip sensor side view type
Sensors > Infrared Light Emitting Diodes
|
ROHM[Rohm]
|
| EF2-1.5NU EF2-1.5T EF2-1.5TNUX EF2-12NUH EF2-12TNU |
Ultra-low power/ compact and lightweight/ High breakdown voltage/ Surface mounting type
A/D Converter (A-D) IC; Resolution (Bits):24; ADC Sample Rate:192kSPS; Input Channels Per ADC:2; Input Channel Type:Differential Inputs; Data Interface:Serial; Package/Case:24-SOIC; Interface Type:Serial
POWER/ENERGY MEASURE, SMD, SSOP28; Pins, No. of:28; Case style:SSOP; Base number:5467; Termination Type:SMD RoHS Compliant: Yes
Marker Strip; External Height:.135"; External Width:1.13"; Label Material:Vulcanized Fiber 超低功耗，结构紧凑，重量轻，高击穿电压，表面安装型
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type 超低功耗，结构紧凑，重量轻，高击穿电压，表面安装型
CONNECTOR ACCESSORY 连接器附
Ultra-low power, compact and lightweight, High breakdown voltage, Surface mounting type
|
NEC Corp.
NEC, Corp.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM600DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 2SD796 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, SWITCHING
|
New Jersey Semi-Conductor Products, Inc.
|
